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Preliminary Technical Information
PolarHT TM HiPerFET IXFK 102N30P
Power MOSFET
N-Channel Enhancement Mode
Fast Intrinsic Diode
V DSS
I D25
R DS(on)
t rr
=
=
≤
≤
300 V
102 A
33 m ?
200 ns
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
V GS
V GSM
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
Continuous
Transient
300
300
± 20
± 30
V
V
V
V
TO-264 (IXFK)
I D25
I D(RMS)
T C = 25 ° C
External lead current limit
102
75
A
A
G
D
S
(TAB)
I DM
T C = 25°C, pulse width limited by T JM
250
A
I AR
E AR
E AS
dv/dt
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
60
60
2.5
10
A
mJ
J
V/ns
G = Gate
S = Source
D = Drain
T J ≤ 150 ° C, R G = 4 ?
P D
T C = 25 ° C
700
W
International standard package
Unclamped Inductive Switching (UIS)
Low package inductance
T J
T JM
T stg
T L
T SOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
-55 ... +150
150
-55 ... +150
300
260
° C
° C
° C
° C
° C
Features
l
l
rated
l
M d
Mounting torque, Terminal lead torque
1.13/10 Nm/lb.in.
- easy to drive and to protect
Weight
TO-264
10
g
Advantages
l
l
l
Easy to mount
Space savings
High power density
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
BV DSS
V GS = 0 V, I D = 250 μ A
300
V
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 4 mA
V GS = ± 20 V DC , V DS = 0
V DS = V DSS
V GS = 0 V
T J = 125 ° C
2.5
5.0
± 200
25
250
V
nA
μ A
μ A
R DS(on)
V GS = 10 V, I D = 0.5 I D25
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
33
m ?
? 2006 IXYS All rights reserved
DS99221E(05/06)
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